PART |
Description |
Maker |
NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Duracell Renesas Electronics Corporation
|
2SC5544YZ-TR-E 2SC5544YZ-TL-E |
Silicon NPN Epitaxial VHF / UHF wide band amplifier UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.59 MM HEIGHT, MODIFIED SC-89, MFPAK-3
|
Renesas Electronics Corporation
|
2SC5088 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOESE AMPLIFIER APPLICATIONS) VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
MT6L58AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
S-AU82L |
FM RF POWER AMPLIFIER MODULE for UHF BAND
|
Toshiba Semiconductor
|
2SC2643 |
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA
|
2SC2641 |
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
MGF7168C 7168CT_N |
UHF BAND GaAs POWER AMPLIFIER From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
KGF2511 |
Midium Power Amplifier for UHF band From old datasheet system
|
OKI
|
S-AU50L |
UHF BAND FM POWER AMPLIFIER MODULE HAND-HELD TRANSCEIVER
|
Toshiba Semiconductor
|
AWT6108 AWT6108M10P8 |
This quad band power amplifier module is designed to support dual, tri and quad band applications. Power Amplifiers Quad Band Power Amplifier Module 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Anadigics Inc ANADIGICS, Inc.
|