PART |
Description |
Maker |
APT40GP90J |
MOSFET POWER MOS 7 IGBT 68 A, 900 V, N-CHANNEL IGBT ISOTOP-4
|
ADPOW[Advanced Power Technology] Advanced Power Electronics, Corp.
|
APT11GP60K APT11GP60SA |
MOSFET POWER MOS 7 IGBT 41 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
Advanced Power Technolo... Advanced Power Technology MICROSEMI POWER PRODUCTS GROUP
|
APT40GP60J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT45GP120B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT40GP60B2DF2 |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technolo... Advanced Power Technology
|
IRFR9210N IRFRU9120N IRFU9120N FR9120N |
P Channel Surface Mount HEXFET Power MOSFET(P娌??琛ㄨ创??EXFET???MOS?烘?搴??) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A) 功率MOSFET(减振钢板基本\u003d- 100V的,的Rds(on)\u003d 0.48ohm,身份证\u003d- 6.6A P Channel Straight Lead HEXFET Power MOSFET(P沟道HEXFET功率MOS场效应管) P通道直铅HEXFET功率MOSFET的性(P沟道的HEXFET功率马鞍山场效应管) P Channel Straight Lead HEXFET Power MOSFET(P娌??HEXFET???MOS?烘?搴??)
|
IRF International Rectifier, Corp.
|
2SK2981 2SK2981-Z 2SK2981-E1 2SK2981-T1 2SK2981-T2 |
Power MOSFET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor
|
NEC[NEC] NEC Corp.
|
APT50M38JFLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. MOSFET P-CH 20V 4.3A 8-SOIC 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 POWER MOS 7 500V 91A 0.038 Ohm
|
Advanced Power Technology, Ltd.
|
APT30GP60B |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technolo... Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT10050B2VFR APT10050LVFR |
21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOS V 1000V 21A 0.500 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
APT65GP60L2DQ2 APT65GP60L2DQ2G |
POWER MOS 7 IGBT
|
http:// Advanced Power Technology
|
APT35GP120BG |
POWER MOS 7? IGBT
|
Microsemi Corporation
|