| PART |
Description |
Maker |
| BB640 |
Varactordiodes - Silicon variable capacitance diode for hyperband TV/VTR tuners
|
INFINEON[Infineon Technologies AG]
|
| BB844 |
Varactordiodes - FM Tuner Diode
Silicon Variable Capacitance Diode
|
Infineon
|
| BB689-02V |
Varactordiodes for Tunerapplications
|
Infineon
|
| BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve...
From old datasheet system
NPN Silicon Transistors with High Reverse Voltage
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
NPN Silicon RF Transisrors
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管（高耐压l低集电极发射极饱和电压）
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| 2SC3569 |
Silicon transistor
NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
|
NEC
http://
|
| FJP5021NBSP FJP5021 FJP5021Y FJP5021RTU FJP5021RVT |
NPN Silicon Transistor
High Voltage and High Reliability
From old datasheet system
High Speed Switching : tF = 0.1μs (Typ.)
|
FAIRCHILD[Fairchild Semiconductor]
|
| ZHCS1006 ZHCS1006TA |
SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT?/a>
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ??uperBAT??/td>
| SOT-23
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE B>SuperBAT
DIODE SCHOTTKY SOT-23 肖特基二极管采用SOT - 23
High Current Schottky Diode
|
Fairchild Semiconductor
Zetex Semiconductors
Zetex Semiconductor PLC
|
| 2SC1622 2SC1622A 2SC1622A-T2B 2SC1622A-L 2SC1622A- |
Low-frequency high-gain amplification silicon Tr.
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC[NEC]
|
| 2SC2369 2SC1560 2SC1988 2SC2570 NE02100 NE02103 NE |
NPN SILICON HIGH FREQUENCY TRANSISTOR
NPN SILICON HIGH FREQUNY TRANSISTOR NPN硅晶体管高FREQUNY
NPN SILICON HIGH FREQUNY TRANSISTOR NPN硅晶体管FREQUNY
|
NEC[NEC]
NEC Corp.
Honeywell International, Inc.
NEC, Corp.
|
| RUR-D820 RUR-D815 RUR-D810 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 200 V.
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 150 V.
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 100 V.
|
General Electric Solid State
|
| 2N4347 2N3442 |
High voltage silicon N-P-N transistor. 140V, 100W.
High voltage silicon N-P-N transistor. 160V, 117W.
|
General Electric Solid State
|
| BC638ZL1 BC636-16ZL1 BC640 BC640ZL1 BC636 BC636-16 |
Transistor Silicon Plastic PNP
High Current Transistors PNP Silicon
High Current Transistors(PNP Silicon)
High Current Transistors 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ONSEMI[ON Semiconductor]
|
