PART |
Description |
Maker |
K4S280432C-TC_L1H K4S280432C K4S280432C-TC_L1L K4S |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
K4R271669E |
128Mbit RDRAM(E-die)
|
SAMSUNG[Samsung semiconductor]
|
K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33 K4D2 |
128Mbit GDDR SDRAM
|
Samsung semiconductor
|
K4N26323AE K4N26323AE-GC20 K4N26323AE-GC22 K4N2632 |
128Mbit GDDR2 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
V54C3128 |
128Mbit SDRAM 3.3 VOLT, BGA PACKAGE
|
Mosel Vitelic, Corp.
|
M65KA128AL M65KA128AL10W5 |
128Mbit (4 Banks x 2M x 16) 1.8V Supply, Low Power SDRAMs
|
STMicroelectronics
|
TH58V128FT |
128Mbit (16M x 8bit) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
HY57V281620HCTP-H |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz
|
Hynix Semiconductor
|
K4D263238G-GC360 K4D263238G-GC33 K4D263238G-GC2A0 |
4M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144 128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存 4M X 32 DDR DRAM, 0.55 ns, PBGA144 FBGA-144 4M X 32 DDR DRAM, 0.55 ns, PBGA144 LEAD FREE, FBGA-144
|
Sensitron Semiconductor Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
V54C3128404VT |
128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
|
Mosel Vitelic Corp
|
KM416RD8AS-SCM80 KM416RD8AS KM416RD8AS-RBM80 |
128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|