PART |
Description |
Maker |
IPP50CN10NG IPP50CN10NG10 IPI50CN10NG IPB50CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
BSC022N03 BSC022N03S |
OptiMOS2 Power-Transistor
|
Infineon Technologies A... INFINEON [Infineon Technologies AG] INFINEON[Infineon Technologies AG]
|
BSC032N03S |
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
IPP13N03LBG IPP13N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
BSO072N03S |
OptiMOS2 Power-Transistor Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 6.8mOhm, 15A, LL
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BSO052N03S |
OptiMOS2 Power-Transistor Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 5.2mOhm, 17A, LL
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BSO104N03S |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 9.7mOhm, 13A, LL OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSL202SN |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
BSB024N03LXG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
BSF083N03LQG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
IPU07N03LA |
OptiMOS®2 - Power packages OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ?的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员?
|
Infineon Toshiba, Corp.
|