| PART |
Description |
Maker |
| IRGP420U GP420U |
Insulated Gate Bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠?
500V Discrete IGBT in a TO-3P (TO-247AC) package
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管（IGBTs）（超快速绝缘栅型双极型晶体管）
|
International Rectifier, Corp.
|
| SG7N06DP SG7N06P |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| SG15N12DP SG15N12P |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| IXBN42N170A |
Discrete IGBTs
|
IXYS
|
| SG50N06D2S |
(SG50N06D2S / SG50N06D3S) Discrete IGBTs
|
Sirectifier Semiconductors
|
| L412 IXBF9N140 IXBF9N160 |
High Voltage BIMOSFET
High Voltage BIMOSFET 7 A, 1600 V, N-CHANNEL IGBT
High Voltage BIMOSFET 高压BIMOSFET
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| GT40QR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| HGTD8P50G1S HGTD8P50G1 HGTP8P50G1 |
8A, 500V P-Channel IGBTs
8A 500V P-Channel IGBTs
Mechanism, 2-inch w/front paper feed and partial cutter
8A/ 500V P-Channel IGBTs
|
http://
INTERSIL[Intersil Corporation]
|
| SGB06N60 SGD06N60 SGP06N60 Q67040-S4450 SGU06N60 Q |
Heat Sink; Package/Case:TO-220; Thermal Resistance:13.4 C/W; Mounting Type:Through Hole; Length:25.4mm; Height:12.7mm; Width:34.92mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes
Fast IGBT in NPT-technology
IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 6A 600V TO252AA SMD IGBT
IGBTs & DuoPacks - 6A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
| IXBH42N170A IXBT42N170A |
(IXBH42N170A / IXBT42N170A) BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH20N140 IXBH20N160 |
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor 20 A, 1400 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
IXYS Corporation
|
| IXBH28N170A |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
