| PART |
Description |
Maker |
| UPC1658G UPC1658G-E1 |
RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Low Noise, High Frequncy Si MMIC Amplifier(低噪声高频率放大
LOW NOISE/ HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE HIGH FREQUENCY Si MMIC AMPLIFIER
|
NEC Corp.
NEC[NEC]
|
| AM50-0006 AM50-0006PCS AM50-0006PDC AM50-0006TR AM |
1400-2000 MHz, low noise amplifier
Circular Connector; No. of Contacts:128; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
Low Noise Amplifier 1400 - 2000 MHz
1400-1520 MHz, low noise amplifier
|
MACOM[Tyco Electronics]
MA-Com
|
| KTC3880 KTC3911 |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, VHF BAND AMPLIFIER) 外延平面NPN晶体管（高频低噪声放大器，甚高频波段放大器）
EPITAXIAL PLANAR NPN TRANSISTOR (LOW NOISE AMPLIFIER)
|
KEC Holdings
KEC(Korea Electronics)
|
| AD605-EB AD605ACHIPS AD605AR-REEL AD605AR-REEL7 AD |
Accurate, Low Noise, Dual Channel Linear-In-dB Variable Gain Amplifier, Optimized For Any Application Requiring High Performance
Dual, Low Noise, Single-Supply Variable Gain Amplifier
|
http://
Analog Devices, Inc.
ANALOG DEVICES INC
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HA1-5104_883 HA-5104883 HA-5104/883 |
Op Amp, Quad 8MHz, Unity Gain Stable, Low Noise, 883 Compliant
Low Noise, High Performance, Quad Operational Amplifier
|
INTERSIL[Intersil Corporation]
|
| 2SC4095 2SC4095-T1 2SC4095R 2SC4095R-T2 2SC4095R-T |
For amplify microwave and low noise.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
|
NEC[NEC]
|
| CMLT5078E CMLT5087E CMLT5088E |
SMD Small Signal Transistor Dual PNP Low Noise Amplifier
SMD Small Signal Transistor Dual NPN & PNP Low Noise Amplifier
SMD Small Signal Transistor Dual NPN Low Noise Amplifier
ENHANCED SPECIFICATION PICOmini SURFACE MOUNT SILICON DUAL TRANSISTORS
|
Central Semiconductor Corp
|
| AN1438 |
LOW NOISE AMPLIFIER OPTIMIZED FOR MINIMUM NOISE FIGURE AT 1.9GHZ USING START420
|
SGS Thomson Microelectronics
|
| L1935 |
Low Noise Amplifier 1800-1950 MHz, 35 dB Gain, 0.9dB Noise Figure
|
PDI[PREMIER DEVICES, INC.]
|
| 2N3799X |
PNP,Low Noise Amplifier Transistor(低噪声、放大器型PNP晶体
PNP LOW NOISE AMPLIFIER TRANSISTOR
PNP, LOW NOISE AMPLIFIER TRANSISTOR
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
