| PART |
Description |
Maker |
| CGY2030MC1 |
DECT 500 mW power amplifier
|
Philips
|
| CGY2030M |
DECT 500 mW power amplifier
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| SM1819-52LD |
1805 - 1880 MHz 160 Watt Power Amplifier
|
Stealth Microwave, Inc.
|
| P1935 |
Power Amplifier 1880-1920 MHz 35 dB min. Gain @ 1900MHz
|
PDI[PREMIER DEVICES, INC.]
|
| PTF181301 PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦，1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
|
INFINEON[Infineon Technologies AG]
|
| UAA3545 UAA3545HL UAA3545HL/C1 |
UAA3545; Fully integrated DECT transceiver
Fully integrated DECT transceiver TELECOM, CORDLESS, RF AND BASEBAND CIRCUIT, PQFP32
|
Philips
NXP Semiconductors N.V.
|
| STB7002TR STB7002 7002 |
1.8 GHZ THREE GAIN LEVEL LNA
1.8GHz THREE GAIN LEVEL LNA
1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
ST Microelectronics
http://
STMicroelectronics
意法半导
|
| PH1819-33 |
Wireless Bipolar Power Transistor 33W, 1805-1880 MHz
|
M/A-COM Technology Solutions, Inc.
|
| PXAC182002FC-V1 |
High Power RF LDMOS FET 180W, 28V, 1805 - 1880 MHz
|
Wolfspeed
|
| PTFA180701E PTFA180701F |
Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 鈥?1880 MHz
|
Infineon Technologies AG
|
