PART |
Description |
Maker |
MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT GALLIUM ARSENIDE PHEMT
|
MOTOROLA[Motorola, Inc]
|
MRFG35003N6AT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35010MT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35010R1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE 40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE 150 V, SILICON, PIN DIODE 27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
DGS20-022A DGSK40-025A DGS20-025A DGSK40-022A |
250V gallium arsenide schottky rectifier 220V gallium arsenide schottky rectifier
|
IXYS[IXYS Corporation]
|
WP710A10ID5V |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
DMK3379-000-295-011 DMK3248-000-417-001 |
GALLIUM ARSENIDE, KU BAND, MIXER DIODE GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
OH10007 |
Gallium Arsenide Devices
|
Panasonic
|
OH10024 |
Gallium Arsenide Devices
|
Panasonic
|
OH10015 |
Gallium Arsenide Devices
|
Panasonic
|