| PART |
Description |
Maker |
| VSMY3940X01-GS08 VSMY3940X01-GS18 |
High Speed Infrared Emitting Diode, 940 nm,Surface Emitter Technology
|
Vishay Siliconix
|
| VSMY12850 |
High Speed Infrared Emitting Diodes, 850 nm,Surface Emitter Technology
|
Vishay Siliconix
|
| VSMY2850RG11 |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
| VSMY3850-GS08 VSMY3850-GS18 |
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
| VSLY3850 |
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
| SFH4391 |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
From old datasheet system
|
Infineon
|
| SFH4505 |
(SFH4500 / SFH4505) Schnelle IR-Lumineszenzdiode (950 nm) im SMR-Gehuse High-Speed Infrared Emitter (950 nm)
|
Infineon Technologies AG
|
| SFH4255 |
High Power Infrared Emitter (850 nm)
|
OSRAM GmbH
|
| SFH4209 |
Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter
|
OSRAM GmbH
|
| SFH4203 |
Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter
|
OSRAM GmbH
|
| Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487 |
From old datasheet system
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| VSMY7852X01-GS08 |
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Techno
|
Vishay Siliconix
|
