PART |
Description |
Maker |
TC58FVB160-12 TC58FVB160-85 |
16M Bit (1M×16Bits ) CMOS NAND EEPROM(16M CMOS与非EEPROM) 1,600位(100万16位)的CMOS闪存EEPROM的(1,600 EEPROM中的CMOS与非
|
Toshiba Corporation Toshiba, Corp.
|
TC58V64AFTI |
64M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
TC58DVM92A1FT00 |
512M-Bit CMOS NAND EPROM
|
Toshiba
|
TH58V128DC |
128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia鈩?
|
Toshiba Semiconductor
|
NM27C020 NM27C020QE150 |
2 Meg (256k x 8) UV Erasable CMOS EPROM [Life-time buy] 2097152-Bit (256K x 8) UV Erasable CMOS EPROM 2,097,152-Bit (256K x 8) UV Erasable CMOS EPROM 2 /097 /152-Bit (256K x 8) UV Erasable CMOS EPROM
|
FAIRCHILD[Fairchild Semiconductor]
|
TC58256DC |
CMOS NAND EPROM
|
Toshiba Semiconductor
|
TC58256FTI |
CMOS NAND EPROM
|
Toshiba
|
MX25L1602 MX25L1602MC-50 |
16M-BIT [16M x 1] CMOS SERIAL FLASH EEPROM
|
Macronix International
|
K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
MBM29F016A-90PFTN MBM29F016A-90PFTR MBM29F016A-12 |
FLASH MEMORY 16M (2M x 8) BIT CMOS 16M (2M x 8) bit
|
Fujitsu Microelectronics
|