| PART |
Description |
Maker |
| GS8321ZV18 GS8321ZV32 GS8321ZV36E-250 GS8321ZV36E- |
36Mb NBT SRAMs
36Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
ETC
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| GS832018T-133V GS832018T-133IV GS832018T-150IV GS8 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8320EV18GT-225 GS8320EV18GT-133 GS8320EV18GT-133 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| AS5SP1M36DQR-167_ET AS5SP1M36DQR-167_IT AS5SP1M36D |
36Mb Pipelined Sync SRAM
|
Austin Semiconductor
|
| GS832036GT-150IV GS832036GT-150V |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI Technology
|
| GS8342D08E-250 GS8342D08E-250I GS8342D08E-333 GS83 |
36Mb SigmaQuad-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
| GS8321E18E-166V GS8321E18E-133IV GS8321E18E-133V G |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| MT54W4MH9B-4 MT54W4MH9B-5 MT54W4MH9B-6 MT54W4MH9B- |
36Mb QDR?II SRAM 2-WORD BURST
|
Micron Technology
http://
|
| GS8342T08GE-167I GS8342T08GE-200 GS8342T08GE-333I |
36Mb SigmaCIO DDR-II Burst of 2 SRAM
|
GSI[GSI Technology]
|
| GS8320ZV18T-250 GS8320ZV18T-250I GS8320ZV18T-225 G |
36Mb Pipelined and Flow Through Synchronous NBT SRAMs
|
GSI[GSI Technology]
|
