PART |
Description |
Maker |
1N445 1N316 1N440 1N547 1N535 1N539 1N536 1N533 1N |
GOLD BONDED GERMANIUM DIODES Diode Zener Single 8.4V 5% 500mW 2-Pin DO-7 Diode Zener Single 68V 5% 1.5W 2-Pin DO-41 Diode Switching 400V 3A 2-Pin SOD-64 Ammo Diode Zener Single 87V 5W 2-Pin DO-201AE Diode Switching 75V 0.25A Automotive 2-Pin SOD-323 T/R
|
New Jersey Semiconductor
|
CPD74 |
Switching Diode Monolithic Isolated Quad Switching Diode Chip
|
Central Semiconductor Corp
|
BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
CPD41 |
Switching Diode High Current Switching Diode Chip
|
Central Semiconductor Corp
|
1N4148 |
SMALL SIGNAL SWITCHING DIODE Fast Switching Diode
|
Chenyi Electronics Comchip Technology
|
CPD91V10 |
Switching Diode Low Leakage Switching Diode Chip
|
Central Semiconductor Corp
|
CMPD2004S CMPD2003 CMPD2003C CMPD2003S CMPD2004 CM |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE SMD Switching Diode Dual: High Voltage: Common Anode
|
CENTRAL[Central Semiconductor Corp]
|
IKA10N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
Q67040S4714 IKP04N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
DCA01006 DCA010-TB-E |
Very High-Speed Switching Diode Silicon Epitaxial Planar Type (Anode Common) Very High-Speed Switching Diode
|
Sanyo Semicon Device
|
1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35 SWITCHING DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|