| PART |
Description |
Maker |
| M68AW256ML70ZB6 M68AW256ML55ND1 M68AW256ML55ND1E M |
4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位56K × 16.0V异步SRAM
256K X 16 STANDARD SRAM, 55 ns, PDSO44
256K X 16 STANDARD SRAM, 70 ns, PBGA48
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| CY7C1041V33 CY7C1041V33-15ZC CY7C1041V33-20ZC CY7C |
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 17 ns, PDSO44
From old datasheet system
GIGATRUE 550 CAT6 MOLDED COMPONENT, RED 7FT
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 25 ns, PDSO44
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| AS7C33256PFS18B AS7C33256PFS18BV.1.7 AS7C33256PFS1 |
3.3V 256K X 18 pipeline burst synchronous SRAM 3.3 256 × 18管道爆裂同步SRAM
3.3V 256K X 18 pipeline burst synchronous SRAM 256K X 18 STANDARD SRAM, 8 ns, PQFP100
Sync SRAM - 3.3V
From old datasheet system
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的（256 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| LC35256FM LC35256FM-70U FT-55U FT-70U LC35256FT-70 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
256K (32768 words 8 bits) SRAM Control Pins: NOT OE and NOT CE
256K (32768 words x 8 bits) SRAM Control Pins: Not OE and Not CE
256K (32768 words X 8 bits) SRAM Control Pins: OE and CE
256K (32768 words 8 bits) SRAM Control Pins: OE and CE
SRAM,32KX8,CMOS,SOP,28PIN,PLASTIC
From old datasheet system
|
Intersil
Sanyo Semiconductor Corp
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| CY7C1354DV25-200BZI |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture 256K X 36 ZBT SRAM, 3.2 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| GS88237BGB-200IV |
256K x 36 9Mb SCD/DCD Sync Burst SRAM 256K X 36 CACHE SRAM, 2.5 ns, PBGA119
|
GSI Technology, Inc.
|
| CY7C1352-133AC CY7C1352-80AC |
256K x18 Pipelined SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IS61LV25616AL-8LQI IS61LV25616AL-12BI IS61LV25616A |
256K X 16 STANDARD SRAM, 8 ns, PQFP44 LQFP-44
256K X 16 STANDARD SRAM, 12 ns, PBGA48
256K X 16 STANDARD SRAM, 8 ns, PDSO44
|
Hitachi,Ltd.
INTEGRATED SILICON SOLUTION INC
|
| GS88132BT-150IV |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| DS1254 |
2M x 8 NV SRAM with Phantom Clock
|
Dallas
|
