PART |
Description |
Maker |
BSC052N03S |
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
IPP50CN10NG IPP50CN10NG10 IPI50CN10NG IPB50CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP05N03LBG IPP05N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP10N03LBG IPP10N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPF12N03LBG |
OptiMOS2 Power-Transistor 的OptiMOS2功率晶体
|
Infineon Technologies AG
|
BSO064N03S |
OptiMOS2 Power-Transistor Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 6.4mOhm, 16A, LL
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BSO052N03S |
OptiMOS2 Power-Transistor Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 5.2mOhm, 17A, LL
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BSR302N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
BSL202SN |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
BSB024N03LXG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
IPU07N03LA |
OptiMOS®2 - Power packages OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ?的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员?
|
Infineon Toshiba, Corp.
|