| PART |
Description |
Maker |
| HYS64D16000GDL-8-B HYS64D16000GDL-6-B HYS64D16000G |
DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| W3DG7216V-AD1 W3DG7216V7AD1 W3DG7216V10AD1 W3DG721 |
128MB - 16Mx72 SDRAM, UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| HYMD116725AL8-K HYMD116725AL8-L HYMD116725AL8-H HY |
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 16MX72 |的CMOS |内存| 184PIN |塑料
|
Toshiba, Corp.
|
| AS4DDR16M72-8_ET AS4DDR16M72-8_IT AS4DDR16M72-8_XT |
16M X 72 DDR DRAM, 0.8 ns, PBGA219
16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
| W3E16M72S-266BI W3E16M72S-250BC W3E16M72S-200BC W3 |
16Mx72 DDR SDRAM
|
WEDC[White Electronic Designs Corporation]
|
| HYS64D16020GD HYS64D16020GDL-7-A HYS64D16020GDL-8- |
DDR SDRAM Modules - 128MB (16Mx64) PC2100 2-bank
Unbuffered DDR SDRAM SO Modules
|
Infineon Technologies AG
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M383L1713CT1 |
16Mx72 DDR SDRAM 184pin DIMM based on 16Mx8 Data Sheet
|
Samsung Electronic
|
| HB54A1288KM-10B HB54A1288KM-A75B HB54A1288KM-B75B |
128MB DDR SDRAM S.O. DIMM
|
Elpida Memory
|
| NT5DS32M4AT |
(NT5DS16M8AT / NT5DS32M4AT) 128Mb DDR SDRAM
|
Nanya Techology
|
