| PART |
Description |
Maker |
| M2S56D40ATP-75L M2S56D40ATP-75AL M2S56D40AKT-75 M2 |
256M Double Data Rate Synchronous DRAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 325-5M-15 305-5M-15 1595-5M-15 575-5M-15 480-8M-20 |
RIEMEN SYNCHRON HTD L 325MM B 15MM
RIEMEN SYNCHRON HTD L 305MM B 15MM
RIEMEN SYNCHRON HTD L 575MM B 15MM
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
RIEMEN SYNCHRON HTD L 480MM B 30MM
RIEMEN SYNCHRON HTD L 560MM B 200MM
RIEMEN SYNCHRON HTD L 600MM B 200MM
Dual/Triple-Voltage µP Supervisory Circuits
RIEMEN SYNCHRON HTD L 640MM B 200MM
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits
Low-Noise, Low-Dropout, 150mA Linear Regulators with '2982 Pinout
RIEMEN SYNCHRON HTD L 720MM B 30MM
3-1/2 Digit A/D, BCD, -40C to 85C, 24-PDIP 600mil, TUBE
RIEMEN SYNCHRON HTD L 880MM B 200MM
RIEMEN SYNCHRON HTD L 960MM B 200MM
RIEMEN SYNCHRON HTD L 960MM B 30MM
RIEMEN SYNCHRON HTD L 1040MM B 200MM
RIEMEN SYNCHRON HTD L 450MM B 15MM
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit
2-Wire-Interfaced 8-Bit I/O Port Expander with Reset
Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits
1.2A Dual MOSFET Drvr, 0C to 70C, 8-PDIP, TUBE
RIEMEN SYNCHRON HTD L 1100MM B 15MM
RIEMEN SYNCHRON HTD L 980MM B 15MM
RIEMEN SYNCHRON HTD L 1800MM B 15MM
RIEMEN SYNCHRON HTD L 1120MM B 30MM
RIEMEN SYNCHRON HTD L 1120MM B 200MM
RIEMEN SYNCHRON HTD L 1200MM B 200MM
RIEMEN SYNCHRON HTD L 1260MM B 200MM
RIEMEN SYNCHRON HTD L 1600MM B 200MM
RIEMEN SYNCHRON HTD L 1440MM B 200MM
RIEMEN SYNCHRON HTD L 1440MM B 30MM
RIEMEN SYNCHRON HTD L 1040MM B 30MM
RIEMEN SYNCHRON HTD L 1420MM B 15MM
RIEMEN SYNCHRON HTD L 1600MM B 30MM
RIEMEN SYNCHRON HTD L 1270MM B 15MM
RIEMEN SYNCHRON HTD L 1200MM B 30MM
RIEMEN SYNCHRON HTD L 890MM B 15MM 里门的SYNCHRON HTD890MM15毫米
RIEMEN SYNCHRON HTD L 1595MM B 15MM 里门的SYNCHRON HTD595MM5毫米
RIEMEN SYNCHRON HTD L 560MM B 30MM 里门的SYNCHRON HTD560MM0毫米
RIEMEN SYNCHRON HTD L 880MM B 30MM 里门的SYNCHRON HTD80┨乙30毫米
|
TE Connectivity, Ltd.
Amphenol, Corp.
Rubycon, Corp.
|
| GS8170DD18GC-333IT GS8170DD18C-333I GS8170DD18C-25 |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM
300MHz 1M x 18 18MB double data rate sigmaRAM SRAM
250MHz 1M x 18 18MB double data rate sigmaRAM SRAM
1M X 18 STANDARD SRAM, 1.6 ns, PBGA209
|
GSI TECHNOLOGY
|
| EM44BM1684LBB-3F |
512Mb (8M隆驴4Bank隆驴16) Double DATA RATE 2 SDRAM
512Mb (8M×4Bank×16) Double DATA RATE 2 SDRAM
|
Eorex Corporation
|
| EM42AM1684LBA-75FE EM42AM1684LBA-7FE EM42AM1684LBA |
512Mb (8M】4Bank】16) Double DATA RATE SDRAM
512Mb (8M隆驴4Bank隆驴16) Double DATA RATE SDRAM
|
Eorex Corporation
|
| M13S5121632A-2S |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M13S2561616A-2S |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M14D2561616A-2E |
Internal pipelined double-data-rate architecture; two data access per clock cycle
|
Elite Semiconductor Mem...
|
| NT5DS4M32EG-6 NT5DS4M32EG NT5DS4M32EG-5 NT5DS4M32E |
1M 】 32 Bits 】 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W9412G6JH W9412G6JH-5 |
2M ?4 BANKS ?16 BITS DDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
|
Winbond
|
| ADD8608A8A-75BA ADD8608A8A ADD8608A8A-75B |
Double Data Rate SDRAM
|
ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
|
