| PART |
Description |
Maker |
| M5002_0611 M5002 M500216RDK M500216RDK-R M500216RL |
9x16 mm FR-4, 5.0 Volt, CMOS/TTL/PECL/LVDS, HPXO
|
MTRONPTI[MTRONPTI]
|
| M50021DTDK-R M500278TLK-R |
9x16 mm FR-4, 5.0 Volt, CMOS/TTL/PECL/LVDS, HPXO
|
MTRONPTI
|
| M50022ERDK-R M50022ERLK-R M500276RPK M50022ETPK-R |
9x16 mm FR-4, 5.0 Volt, CMOS/TTL/PECL/LVDS, HPXO 9x16毫米FR - 4.0伏，路CMOS / TTL / PECL LVDS的，HPXO
9x16 mm FR-4, 5.0 Volt, CMOS/TTL/PECL/LVDS, HPXO 9x16毫米的FR - 4.0伏，路CMOS / TTL / PECL LVDS的，HPXO
|
MtronPTI
|
| M5001_0611 M5001 M500116RDK M500116RDK-R M500116RL |
9x16 mm FR-4, 3.3 Volt, CMOS/TTL/PECL/LVDS, HPXO
|
http://
MTRONPTI[MTRONPTI]
|
| M500320R2LK M500320R1PK-R M500370R1LK-R M500370R1P |
9x16 mm FR-4, 3.3 Volt, CMOS/TTL/PECL/LVDS, HPVCXO 9x16毫米的FR - 43.3伏，路CMOS / TTL / PECL LVDS的，HPVCXO
9x16 mm FR-4, 3.3 Volt, CMOS/TTL/PECL/LVDS, HPVCXO 9x16毫米的FR - 4.3伏，路CMOS / TTL / PECL LVDS的，HPVCXO
|
MtronPTI
|
| M50040611 M500420T1LK-R |
9x16 mm FR-4, 5.0 Volt, CMOS/TTL/PECL/LVDS, HPVCXO 9x16毫米的FR - 45.0伏，路CMOS / TTL / PECL LVDS的，HPVCXO
|
MtronPTI
|
| AM29LV160 AM29LV160BB70RSEB AM29LV160BB70REEB AM29 |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
6800uF 100WV 20% *NO Pb*
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 16Mb(2M×81Mx16, 3V, CMOS引导扇区闪存
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PBGA48
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PDSO48
VARISTOR METAL-OXIDE 150V RAD.3 10MM-DIA BULK 2M X 8 FLASH 3V PROM, 70 ns, PDSO44
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 90 ns, PDSO44
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
http://
|
| IDT72V36104 IDT72V36103 IDT72V3694 IDT72V3693 |
3.3 VOLT CMOS SyncBiFIFO?
3.3 VOLT CMOS SyncFIFO?
|
IDT
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| RC86L60-3 RC86L60-2 RC86L60-1 |
CMOS, 3.3 Volt / 5 Volt Voice Synthesizer Chipset
|
List of Unclassifed Manufacturers
|
| AM29SL800B AM29SL800BB170EC AM29SL800BB170ECB AM29 |
High Speed CMOS Logic Octal Inverting Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-CDIP -55 to 125
High Speed CMOS Logic Quad 2-Input EXCLUSIVE OR Gates 14-CDIP -55 to 125
4-Bit Magnitude Comparator 16-CDIP -55 to 125
High Speed CMOS Logic Dual Positive-Edge Trigger D Flip-Flops with Set and Reset 14-CDIP -55 to 125
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.8伏的CMOS只超低电压快闪记忆体
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 170 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
|
