| PART |
Description |
Maker |
| FMMT491QTC FMMT491QTA |
60V NPN MEDIUM POWER TRANSISTOR IN SOT23
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
|
Diodes Incorporated
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| 2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| IRFZ24L IRFZ24NS IRFZ24NSTRR IRFZ24NSTRL IRFZ24NL |
(159.21 k) 59.21十一
Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A) 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 0.07ohm，身份证\u003d 17A条）
55V,17A,N-Channel HEXFET Power MOSFET(55V,17A,N沟道 HEXFET功率MOS场效应管) 55V的，17A条，N沟道HEXFET功率MOSFET5V的，17A条，沟道的HEXFET功率马鞍山场效应管）
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFZ24N IRFZ24NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)
|
IRF[International Rectifier]
|
| IRF3205 IRF3205PBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)
|
IRF[International Rectifier]
|
| SG2824J_DESC SG28XXL_883B JAN2801J JAN2802J JAN280 |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
Driver - Medium Current Array; Package: LCC; 0.6 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
Driver - Medium Current Array; Package: DIP; 0.6 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
Driver - Medium Current Array; Package: DIP; 0.5 A, 95 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
Driver - Medium Current Array; Package: LCC; 0.5 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Microsemi, Corp.
http://
Microsemi Corporation
|
| IRFIZ24N IRFIZ24NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=14A)
|
IRF[International Rectifier]
|
| IRFRU1205 IRFU1205 IRFR1205 IRFR1205TRR INTERNATIO |
(IRFR1205 / IRFU1205) Power MOSFET
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A)
|
International Rectifier
|
| IRF5N4905 |
-55V Single P-Channel Hi-Rel MOSFET in a SMD-1 package
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.024ohm, Id=-55A*)
SURFACE MOUNT (SMD-1) 55V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.024ohm/ Id=-55A*)
|
IRF[International Rectifier]
|
| 2N3110 2N3107 2N3109 |
NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES
NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES NPN硅自动对焦中功率功放
NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES
|
International Rectifier, Corp.
MICRO-ELECTRONICS[Micro Electronics]
|
| IRF5M4905 IRF5M4B905 |
Avalanche Energy Ratings
THRU-HOLE (TO-254AA) 55V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.03ohm, Id=-35A*)
|
International Rectifier
|
