| PART |
Description |
Maker |
| 2N5589 2N5590 2N5591 |
(2N5589 - 2N5591) RF And Microwave Transistors
|
Microsemi Corporation
|
| MS1337 |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 30; P(in) (W): 3; Gain (dB): 10; Vcc (V): 12.5; Cob (pF): 120; fO (MHz): 0; Case Style: M113 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| 2SK3074 EE08686 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
From old datasheet system
RF POWER MOSFET FOR VHF - AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| Q67006-A5150 Q67000-A5150 TUA2019-5X TUA2019-5XGEG |
VHF I/VHF II/UHF-Tuner IC
VHF I / VHF II / UHF-Tuner IC 甚高频的I /甚高频二/超高频调谐器IC
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| LMP2003 |
VHF Silicon MOSFET Power Amplifier Module(5.5W ,7.2V,220MHz-222MHz)(VHF MOSFET功率放大器模输出功率:5.5W,电压:7.2V,220MHz-222MHz))
|
Semelab(Magnatec)
|
| HN3C01FU |
NPN EPITAXIAL PLANAR TYPE (TV TUNERM VHF CONVERTER, TV VHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SC4182 |
UHF/VHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
|
NEC[NEC]
|
| 2SK2973 SK2973 |
From old datasheet system
RF POWER MOS FET(VHF/UHF power amplifiers)
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NE55410GR NE55410GR-T3-AZ 55410 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
CEL[California Eastern Labs]
|
| KIC9307AF-019 |
Digital Tuning System For Portable Audio Equipment,Provided With 5 Bands Of TV(VHF,UHF)/FM/SW/MW/LM(用于便携式音频设备的数字调谐系统（具TV(VHF,UHF)/FM/SW/MW/LM五波段调谐功能）)
|
KEC Holdings
|
| 2SK3075 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF .BAND POWER AMPLIFIER
|
TOSHIBA
|
| BLW29 |
VHF power transistor
|
NXP Semiconductors
Philips Semiconductors
|
