| PART |
Description |
Maker |
| UPB587G UPB1509GV UPB1509GV-E1 |
1GHz INPUT DIVIDE BY 2, 4, 8 PRESCALER IC FOR PORTABLE SYSTEMS
|
NEC Corp.
NEC[NEC]
|
| TC9172P TC9171P TC9182P-1 |
HIGH SPEED PLL WITH BUILT-IN PRESCALER
|
TOSHIBA[Toshiba Semiconductor]
|
| UPB584B UPB584G |
2.5GHZ DIVIDE-BY-2 PRESCALER
From old datasheet system
PRESCALER,SOP,8PIN,PLASTIC
PRESCALER,FP,8PIN,CERAMIC
|
NEC[NEC]
NEC Electron Devices
|
| PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
| Q67120-C850 Q67120-C934 SAB88C166W-5M SAB88C166-5M |
16-Bit CMOS Single-Chip Microcontrollers with/without oscillator prescaler with 32 KByte Flash EPROM
High Speed CMOS Logic Quad 2-Input OR Gates 14-SOIC -55 to 125
|
SIEMENS AG
|
| ADSP-BF608 ADSP-BF609 ADSP-BF607 |
Blackfin Dual-Core Processor up to 1GHz with Hardware Support for VGA Video Analytics
Blackfin Dual-Core Processor up to 1GHz with Hardware Support for HD Video Analytics
Blackfin Dual-Core Processor up to 1GHz for High Performance Digital Signal Processing Applications
|
Analog Devices
|
| HMMC-3008 |
DC-16 GHz GaAs HBT MMIC Divide-by-8 Prescaler
3008 SERIES, PRESCALER, UUC14
|
Agilent(Hewlett-Packard)
AGILENT TECHNOLOGIES INC
|
| D2221UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2219UK D2219 |
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| TIM7179-16UL |
HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| D2031UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
