| PART |
Description |
Maker |
| BBY51 Q62702-B631 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-B0862 BBY5302W BBY53-02W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-B127 BBY33DA-2 |
Silicon Tuning Varactor (Abrupt junction tuning diode Tuning range 25 V High figure of merit) 硅调谐变容二极管（突变结调谐二极管调谐范25 V高品质因数）
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY58-03W Q62702-B912 |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-B918 BBY57-03W BBY5703W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
From old datasheet system
|
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| MMVL409T1G |
Silicon Tuning Diode VHF BAND, 29 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ON Semiconductor
|
| KDV269E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)
|
KEC(Korea Electronics)
|
| KDV214 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING)
|
KEC[KEC(Korea Electronics)]
|
| KDV1484E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AUDIO SIGNAL TUNING
|
KEC(Korea Electronics)
|
| SVC203C09 |
Diffused Junction Type Silicon Diode Varactor Diode for FM Low-Voltage Electronic Tuning Use
|
Sanyo Semicon Device
|
