| PART |
Description |
Maker |
| NAND04GW3C2AN1E NAND04GA3C2A NAND04GA3C2AN1E NAND0 |
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND02GR3B2BZA1 NAND02GR4B2BZA6 NAND02GR3B2BZB1 NA |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，2112 Byte/1056字的页面.8V/3V，NAND闪存
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，2112 Byte/1056字的页面1.8V/3V，NAND闪存
|
意法半导
STMicroelectronics N.V.
|
| NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，4千兆位，8千兆112 Byte/1056字的页面.8V/3V，NAND闪存
|
STMicroelectronics N.V.
|
| NAND16GW3C4A NAND08GW3C4AN1E NAND16GW3C4AN1E NAND0 |
8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
| NAND01BG-B NAND01GW3B2AN6 NAND01GR3B2AN6 NAND01GR3 |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND08GW3B2A NAND04GW3B2AN1E NAND08GW3B2AN1E NAND0 |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
Numonyx B.V
|
| OPB992L55 OPB992P15 OPB992N11 OPB992L15 OPB990N51 |
128K SPI SERIAL EEPROM W/ 64-BYTE PAGE, 1.8V, -40C to 85C, 8-SOIC 150mil, TUBE
128K SPI SERIAL EEPROM W/ 64-BYTE PAGE, 1.8V, -40C to 85C, 8-TSSOP, T/R
128K SPI SERIAL EEPROM W/ 64-BYTE PAGE, 1.8V, -40C to 85C, 8-TSSOP, TUBE
128K SPI SERAL EEPROM W/ 64 BYTE PAGE, 1.8V, -40C to 85C, 8-PDIP, TUBE
8K SPI 1K X 8, 16B PAGE, 1.8V SER EE, -40C to 85C, 8-SOIC 150mil, TUBE
2K, 256 X 8, 1.8V SER EE, -40C to 125C, 6-SOT-23, T/R
2K, 256 X 8, 1.8V SER EE, -40C to 125C, 8-TSSOP, T/R
2K, 256 X 8, 1.8V SER EE, -40C to 85C, 8-SOIC 150mil, TUBE
|
TT electronics OPTEK Technology
Central Semiconductor, Corp.
|
| NAND512W3A2CN6F NAND512W3A2CN6E |
512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
Numonyx B.V
|
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp.
Intersil Corporation
|
| NAND512R3A2SN6F |
512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories
|
Numonyx B.V
|
| MSM511664C |
65536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE)
|
OKI electronic componets
|
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