| PART |
Description |
Maker |
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF6G13L-250P BLF6G13LS-250P |
Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.
Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLA1011-300 LA1011-300 |
Avionics LDMOS transistors
Avionics LDMOS transistor BLA1011-300<SOT957A (LDMOST)|<<http://www.nxp.com/packages/SOT957A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| LET9120 |
120W 32V HF to 2GHz LDMOS TRANSISTOR in push-pull package
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
|
ST Microelectronics
STMicroelectronics
|
| TMF8901B |
Si RF LDMOS Transistor
|
AUK corp
|
| BLF8G24LS-150GV BLF8G24LS-150V |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF8G20LS-200V |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF8G20LS-220 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF10H6600P BLF10H6600PS BLF10H6600P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF8G27LS-150GV BLF8G27LS-150V |
Power LDMOS transistor
|
NXP Semiconductors
|
