| PART |
Description |
Maker |
| MRF6VP41KH MRF6VP41KHR7 MRF6VP41KHSR6 |
RF Power Field Effect Transistors
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
Freescale Semiconductor, In...
|
| RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
|
| MRF18090B MRF18090BS |
MRF18090B, MRF18090BS 1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS
|
Freescale Semiconductor, Inc
Motorola, Inc
|
| MRF9210 MRF9210R3 |
MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET
RF Power Field Effect Transistor
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MRF9045LR1 MRF9045LSR1 |
945 MHz, 45 W, 28 V Lateral N–Channel Broadband RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTORS
|
Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF9002R2 |
MRF9002R2 1.0 GHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET
RF Power Field Effect Transistor Array
|
Motorola, Inc
|
| MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3 |
MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola, Inc]
|
| MRF5P20180R6 MRF5P20180 |
MRF5P20180R6 1990 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| ATS137 ATS137-P ATS137-PG-7-A ATS137-PG-7-B ATS137 |
SINGLE HALL EFFECT SWITCH MAGNETIC FIELD SENSOR-HALL EFFECT, 1-10mT, 700mV, RECTANGULAR, THROUGH HOLE MOUNT
SINGLE HALL EFFECT SWITCH 单个霍尔效应开
|
Diodes, Inc.
磁阻传感
Diodes Inc.
DIODES[Diodes Incorporated]
|
| MRF373ASR1 MRF373AR1 MRF373A |
MRF373AR1, MRF373ALSR1 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola, Inc]
MOTOROLA [Motorola, Inc]
|
| 2SK3074 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF-BAND POWER AMPLIFIER
|
TOSHIBA
|
