| PART |
Description |
Maker |
| 2N5358 2N5359 |
LOW POWER FIELD EFFECT TRANSISTORS
|
American Microsemicondu...
|
| MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| ZPSD402A1-90LI ZPSD402A1-15LI ZPSD402A1-20LI ZPSD4 |
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Silicon Bridge Rectifiers 现场可编程外
Field-Programmable Peripheral 现场可编程外
|
Atmel, Corp.
|
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| 2SD1843 2SD1843-T |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING NPN硅外延晶体管（达林顿接线）低频功率放大器和低速开
Low-freq. power amp., low-speed switching power tr.
|
NEC, Corp.
NEC[NEC]
|
| MAX6332UR20D3-T MAX6333UR20D3-T MAX6334UR20D3-T MA |
Ultra-low-voltage, low power microprocessor reset circuit. Reset threshold(typ) 1.6V, reset timeout(min) 20ms.
3-Pin, Ultra-Low-Voltage, Low-Power P Reset Circuits
3-Pin, Ultra-Low-Voltage, Low-Power μP Reset Circuits
3-Pin Ultra-Low-Voltage Low-Power P Reset Circuits
From old datasheet system
3-Pin, Ultra-Low-Voltage, Low-Power レP Reset Circuits
3-Pin / Ultra-Low-Voltage / Low-Power P Reset Circuits
TV 79C 79#22D SKT RECP 3引脚，超低电压，低功耗レP复位电路
Ultra-low-voltage, low power microprocessor reset circuit. Reset threshold(typ) 1.6V, reset timeout(min) 1ms.
|
MAXIM - Dallas Semiconductor
http://
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Maxim Integrated Produc...
|
| MRF19030 MRF19030R3 MRF19030SR3 |
RF POWER FIELD EFFECT TRANSISTORS L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| IRFD112 IRFD113 |
(IRFD112 / IRFD113) POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
|
GE Solid State
|
| MRF18060AL MRF18060A MRF18060ALR3 MRF18060ALSR3 |
RF Power Field Effect Transistors
1805?1880 MHz, 60 W, 26 V Lateral N?Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
Motorola Semiconductor Products
|
| MRF21060R3 MRF21060SR3 MRF21060 |
2170 MHz, 60 W, 28 V Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors
|
Freescale (Motorola)
Motorola, Inc
|
| MRF21180R6 MRF21180 |
2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET
RF Power Field Effect Transistor
|
Freescale (Motorola)
MOTOROLA[Motorola Inc]
Motorola, Inc
|
| CY22180SXC-XXX CY22180SXI-XXX |
Very Low Jitter Field and Factory Programmable Clock Generator
|
CYPRESS SEMICONDUCTOR CORP
|
