PART |
Description |
Maker |
SPF-3143Z |
Low Noise pHEMT GaAs FET
|
SIRENZA MICRODEVICES
|
SPF2086 |
Low Noise PHEMT GaAs FET
|
Sirenza Microdevices
|
MGF1907A |
TAPE CARRIER LOW NOISE GaAs FET
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
SPF-2086T |
Low Noise pHEMT GaAs FET 0.1 - 12 GHz Operation
|
SIRENZA[SIRENZA MICRODEVICES]
|
NE71300-N NE71300-M NE71300-L NE713 NE71383B |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
NE34018 NE34018-TI-64-A NE34018-A NE34018-TI-63-A |
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
|
CEL[California Eastern Labs]
|
NE3516S02-T1C NE3516S02-T1C-A NE3516S02-T1D |
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
|
California Eastern Labs
|
NE3520S03 NE3520S03-T1C NE3520S03-T1D |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
Renesas Electronics Corporation
|
CFY25-20 CFY25-17 CFY25-23 Q62703-F107 Q62703-F106 |
Advanced PFC/PWM Combination Controllers 20-SOIC -40 to 105 Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) 砷化镓场效应管(低噪声高增益对于前端放大器离子注入平面结构全部镀金) GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
|
SIEMENS AG
|
M5238AFP M5238AL M5238AP M5238P M5238FP |
DUAL LOW-NOISE J-FET INPUT OPERATIONAL AMPLIFIERS 双路低噪声J - FET输入运算放大 DUAL LOW NOISE JFET INPUT OPERATIONAL AMPLIFIERS CRYSTAL 30.000 MHZ 10PF SMD 双低噪声JFET输入运算放大 Dual Low Noise J-Fet Input Operational Amplifier
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
CFY30 Q62703-F97 |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105 GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
SPF-3143Z |
Low Noise pHEMT GaAs FET
|
SIRENZA MICRODEVICES
|