PART |
Description |
Maker |
MGFC42V6472A |
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC42V3742 |
3.7 - 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET 3.7 - 4.2GHz波段16周内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp. Mitsubishi Electric Semiconductor
|
MGFC42V5964 |
5.9-6.4 GHz Band 16W Internally Matched GaAs FET 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
GSC385-BAL2000 |
2GHz Band Chip Balun
|
Soshin
|
MGFC42V4450A |
4.4-5.0 GHz Band 16W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC42V3436 |
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC41V6472 |
6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC45V6472A_04 MGFC45V6472A MGFC45V6472A04 |
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V6472A C406472A |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET From old datasheet system
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
|
2SC3904 |
Silicon NPN epitaxial planer type(For 2GHz band low-noise amplification)
|
PANASONIC[Panasonic Semiconductor]
|
2SC4805 |
Silicon NPN epitaxial planer type(For 2GHz band low-noise amplification)
|
PANASONIC[Panasonic Semiconductor]
|