PART |
Description |
Maker |
17572 17572-G |
HTSNK. B X-FLOW. .9H LOW FLOW. THRU HOLE HTSNKB型X流0.9 低流量。通孔
|
Vicor, Corp. VICOR[Vicor Corporation]
|
17539-G 17539 |
HTSNK, C LONG,. .911 LOW FLOW. THRU HOLE HTSNK,C长,0.911低流量。通孔
|
Vicor, Corp. VICOR[Vicor Corporation]
|
18068 18068-6 |
HTSNK A X-FLOW .4H LOW FLOW THRU HOLE HTSNK, A X-FLOW, .4H LOW FLOW, THRU HOLE
|
VICOR[Vicor Corporation]
|
M-201-T43 M-201-T M-201-T31 M-201-T33 M-201-T41 |
High flow,adjustable flow switch with right-angle flow
|
Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
15975 15975-B |
BOX 2.13 X 1.38 X.58 PLASTIC BLK BOX 2.13 X 1.38 X.58 PLASTIC GRY HTSNK A LONG .9H LOW FLOW. THREADED
|
VICOR[Vicor Corporation]
|
CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72)流体系结构,通过与总线延迟(带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72)流的SRAM
|
Cypress Semiconductor Corp.
|
GS881Z18BD-133 GS881Z18BD-133I GS881Z18BD-150 GS88 |
133MHz 8.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 150MHz 7.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 166MHz 7ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 200MHz 6.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 225MHz 6ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 250MHz 5.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
IDT71V433 IDT71V433S11PF IDT71V433S11PFI IDT71V433 |
From old datasheet system 32K x 32 3.3V Synchronous SRAM Flow-Through Outputs 32K X 32 Flow-Through Ouputs SRAM
|
Integrated Device Technology IDT
|
IDT71V633S11PF IDT71V633S11PFI IDT71V633S12PFI IDT |
From old datasheet system 64K x 32 3.3V Synchronous SRAM Flow-Through Outputs Burst Counter, Single Cycle Deselect 3.3V 64K x 32 Static SRAM with Flow-Through Outputs
|
IDT[Integrated Device Technology]
|
MT55L512Y32F MT55V512Y36F MT55L1MY18F MT55V512V36F |
16Mb: 512K x 32,Flow-Through ZBT SRAM(16Mb流通式同步静态存储器) 16Mb: 512K x 36,Flow-Through ZBT SRAM(16Mb流通式同步静态存储器) 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器) 16Mb: 512K x 36锛?low-Through ZBT SRAM(16Mb娴??寮??姝ラ?????ㄥ?)
|
Micron Technology, Inc.
|
MC74LCX541DWG MC74LCX54105 MC74LCX573DWG MC74LCX57 |
Low-Voltage CMOS Octal Buffer Flow Through Pinout With 5 V?Tolerant Inputs and Outputs (3?State, Non?Inverting) Low-Voltage CMOS Octal Transparent Latch Flow Through Pinout With 5 V?Tolerant Inputs and Outputs (3?State, Non?Inverting) Low-Voltage CMOS Octal D-Type Flip-Flop Flow Through Pinout With 5 V?Tolerant Inputs and Outputs (3?State, Non?Inverting) Low-Voltage CMOS Octal D-Type Flip-Flop Flow Through Pinout With 5 V−Tolerant Inputs and Outputs (3−State, Non−Inverting)
|
ONSEMI[ON Semiconductor]
|
CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|