| PART |
Description |
Maker |
| K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4F640412D K4F660412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG[Samsung semiconductor]
|
| GM71C4400C-60 GM71C4400C-70 GM71C4400C-80 GM71C440 |
1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
|
LG Semicon Co.,Ltd.
|
| KM44C4100C KM44C4000C KM44V4100C |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung semiconductor
|
| MC-4516CC726 |
16M-Word By 72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| K4E160411D K4E160412D K4E170411D K4E170412D K4E167 |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4E170411D K4E160411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out 4米4位的CMOS动态随机存储器的扩展数据输
Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 220uF; Voltage: 35V; Case Size: 10x16 mm; Packaging: Bulk 4米4位的CMOS动态随机存储器的扩展数据输
|
Bourns, Inc.
Samsung Semiconductor Co., Ltd.
|
| MC-45V16AD641 MC-45V16AD641EF-A10 MC-45V16AD641EF- |
16M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 1,60064位VirtualChannel同步动态RAM模块无缓冲型
16M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 1,6004VirtualChannel同步动态RAM模块无缓冲型
16M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 1,6004位VirtualChannel同步动态RAM模块无缓冲型
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MC-4516CA726PF-A10 MC-4516CA726PF-A80 MC-4516CA726 |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE MODULE UNBUFFERED TYPE
|
NEC, Corp.
NEC Corp.
|
| MC-4516CD641PS-A10 MC-4516CD641PS-A80 MC-4516CD641 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
|
Elpida Memory
|
