PART |
Description |
Maker |
HN27C4000G |
524288-Word x 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
|
Hitachi Semiconductor
|
HN29WB800R-10 HN29WB800R-12 HN29WB800R-8 HN29WB800 |
1048576-WORD X 8-BIT / 524288-WORD X 16-BIT CMOS FLASH MEMORY
|
Hitachi Semiconductor
|
M5M5V408BFP M5M5V408BTP-85LW M5M5V408BKR-70HI |
512K X 8 STANDARD SRAM, 85 ns, PDSO32 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
HM628512SERIES 628512 HM628512LP-5 HM628512LP-5SL |
From old datasheet system 524288-word x 8-bit High Speed CMOS Static RAM
|
http:// Hitachi Metals, Ltd
|
MR27V802D |
524288-Word x 16-Bit or 1048576-Word x 8-Bit One Time PROM 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM
|
OKI electronic components OKI[OKI electronic componets]
|
MSM27C802CZ |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM 524288-Word x 16-Bit or 1048576-Word x 8-Bit One Time PROM
|
OKI electronic components OKI[OKI electronic componets]
|
M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
TC514800AFTLL-70 TC514800AFTLL-80 TC514800AJLL TC5 |
524288 WORD X 8 BIT DYNAMIC RAM
|
Toshiba Corporation Toshiba Semiconductor
|
M5M5Y5636TG-20 M5M5Y5636TG-22 M5M5Y5636TG-25 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M5V5636GP-1603 M5M5V5636GP-16 M5M5V5636GP-13 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
M5M5V5636GP-20 M5M5V5636GP-22 M5M5V5636GP-25 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|