| PART |
Description |
Maker |
| 2N3896 2N3899 2N6171 2N6172 2N6173 2N6174 2N3870 2 |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) 可控硅整流器（反向阻断三极晶闸管
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) 35 A, 400 V, SCR, TO-203AA
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) 35 A, 100 V, SCR, TO-203AA
(2N38xx) Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| MCR106 MCR106-2 MCR106-3 MCR106-4 MCR106-6 MCR106- |
Silicon Controlled Rectifiers 4 A, 200 V, SCR, TO-225AA
Silicon Controlled Rectifiers 4 A, 100 V, SCR, TO-225AA
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Unisonic Technologies Co., Ltd.
Motorola Mobility Holdings, Inc.
|
| BT151-600 BT151 |
600V Vdrm 12A Sensitive Gate Silicon Controlled Rectifier, 1.7@23AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage
Silicon Controlled Rectifiers
|
SemiWell Semiconductor
|
| MCR72-8 MCR72-3 MCR72-6 ON1829 MCR72-D |
Sensitive Gate Silicon Controled Rectifiers Reverse Blocking Thyristor
SCRs 8 AMPERES RMS 100 thru 600 VOLTS
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| C106 C106S C106A C106B C106C C106D C106E C106F C10 |
4A sensitive-gate silicon controlled rectifier. Vrrm 700V.
4-A Sensitive-Gate Silicon Controlled Rectifiers
|
General Electric Solid State
GESS[GE Solid State]
http://
|
| WCU4C60S |
Silicon Controlled Rectifiers
|
Shenzhen Winsemi Microe...
|
| WCP20C60 |
Silicon Controlled Rectifiers
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
| MCR8SD |
SILICON CONTROLLED RECTIFIERS
|
Digitron Semiconductors
|
| 2N1600 |
Silicon Controlled Rectifiers
|
Semitronics
|
| MCR1906-3 MCR1906-6 MCR1906-2 MCR1906-4 MCR1906-5 |
SILICON CONTROLLED RECTIFIERS
|
Digitron Semiconductors
|
| WCPA25C60 |
Silicon Controlled Rectifiers
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
