| PART |
Description |
Maker |
| S29CD016G0PQAI002 S29CD016G0MFAN001 S29CD016G0MFAN |
16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位12亩32位）的CMOS 2.5伏特，只有突发模式，双启动，同步写闪
16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 67 ns, PBGA80
16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| EM4569 EM4469 |
512 bit Read/Write Contactless Identification Device
|
EMMICRO[EM Microelectronic - MARIN SA]
|
| EM4569 |
(EM4469 / EM4569) 512 bit Read/Write Contactless Identification Device
|
EM Microelectronic
|
| AM29BDD160GB54DKF AM29BDD160GB54DKK AM29BDD160GB54 |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
|
AMD[Advanced Micro Devices]
|
| CY14B512Q2A-SXIT CY14E512Q CY14C512Q |
512-Kbit (64 K x 8) SPI nvSRAM Infinite read, write, and RECALL cycles
|
Cypress Semiconductor
|
| BH6627FS |
Magnetic Disk LSIs > FDD read/write amplifier
Read /Write amplifier for FDD
Read / Write Amplifier for FDD(FDD的读/写放大器)
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| EM4469V0WT27 EM4469V1WT27 EM4469V2WT27 EM4469V3WT2 |
RES NTWK SMT 1K OHM 5% 1206 4 RES ISO 512位读/写非接触式识别装
512 bit Read/Write Contactless Identification Device 512位读/写非接触式识别装
From old datasheet system
|
Electronic Theatre Controls, Inc.
ETC
|
| SSI32R5111M-8CL SSI32R5111R-4CL SSI32R5111RM-6CL |
8-Channel Disk Read/Write Circuit 8通道磁盘写电
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
6-Channel Read/Write Circuit 6通道写电
|
Electronic Theatre Controls, Inc.
HIROSE ELECTRIC Co., Ltd.
|
| AM29BDS643GT5KVAI AM29BDS643GT7KVAI AM29BDS643GT5G |
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 64兆位个M x 16位）的CMOS 1.8伏，只有同时写，突发模式闪存
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| XR-511R-4D XR-511-6CP XR-511-6CJ XR-511-6D XR-511R |
4-Channel Disk/Tape Read/Write Circuit
8-Channel Disk Read/Write Circuit 8通道磁盘写电
6-Channel Read/Write Circuit 6通道写电
|
Linear Technology, Corp.
|
| BS320GBD4V BS320GTD4V AM29BDS320GBD9VMI AM29BDS320 |
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 2M X 16 FLASH 1.8V PROM, 90 ns, PBGA64
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 32兆位米16位）.8伏，只有同时写，突发模式闪存
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA64
|
Spansion Inc.
Spansion, Inc.
|
| S29JL064J S29JL064J70TFI000 |
64 Megabit (8M x 8-Bit/4M x 16-Bit) CMOS 3.0 Volt-Only, Simultaneous Read/Write Flash Memory
|
SPANSION
|
