| PART |
Description |
Maker |
| GT5J301 GT5J301_07 GT5J30107 |
GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
N CHANNEL IGBT (HIGH POWER SWITCHING MOTOR CONTROL APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
| MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Mitsubishi Electric Semiconductor
Toshiba Corporation
|
| MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG400J2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
From old datasheet system
|
Toshiba Semiconductor
|
| CP-SNT55W |
Swi tchmode power suppl ies
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| GT25Q301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| MIG20J805H |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) N通道IGBT的（大功率开关，马达控制应用
|
Toshiba Semiconductor
|
