| PART |
Description |
Maker |
| MRF21180 |
MRF21180, MRF21180S 2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF21010 |
MRF21010R1, MRF21010LSR1 2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs
|
Motorola
|
| MRF6S21100HR3 MRF6S21100HSR3 |
2170 MHz, 23 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
Freescale Semiconductor, Inc
|
| MRF21045 |
MRF21045R3, MRF21045LR3, MRF21045SR3, MRF21045LSR3 2170 MHz, 45 W, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF5S21150 |
MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF21085 MRF21085LSR3 MRF21085R3 MRF21085SR3 |
2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| MRF21090 MRF21090R3 MRF21090SR3 |
2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola Inc]
Motorola, Inc
|
| NE1101-00 |
2110 MHz - 2170 MHz RF/MICROWAVE ISOLATOR
|
Rakon France SAS
|
| PTF180101 PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| MHPA21010 |
MHPA21010 2110-2170 MHz, 10 W, 23.7 dB RF High Power LDMOS Amplifier
|
Motorola
|
| MRF9030MR1 MRF9030MBR1 |
945 MHz, 30 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
|
