| PART |
Description |
Maker |
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| MSM27C452CZ |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| MR27V3252D |
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI[OKI electronic componets]
|
| MR27V852DRA MR27V852DMA MR27V852DTP MR27V852D |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| MR27V852E MR27V852ERA MR27V852EJA |
524,288 Word X 16 - Bit or 1,048,576 - Word X 8 - Bit 8 - Word x 16-Bit or 16 - Word x 8-Bit Page Mode One Time PROM
|
OKI[OKI electronic componets]
|
| MR27V6452DMA MR27V6452D |
4,194,304-Word x 16-Bit or 8,388,608-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI[OKI electronic componets]
|
| MSM27C1655CZ |
524,288-Double Word x 32-Bit or 1,048,576-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM 524,288 -双字× 32位或1048576字16 -双字× 32位或8字16位页面模式一次性可编程
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| MSM27C802CZ |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM
524288-Word x 16-Bit or 1048576-Word x 8-Bit One Time PROM
|
OKI electronic components
OKI[OKI electronic componets]
|
| UPD23C64300F9-XXX-BC3 UPD23C64300 UPD23C64300F9-BC |
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) 6400位掩膜可编程ROM00万字位（字节模式 4分字6位（字模式）
CAP 3.6PF 16V /-0.1PF THIN-FILM SN90/PB10/NI 30PPM TR-7-PA
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| M5M29GB161BVP M5M29WT160BVP M5M29GT161BVP M5M29GT1 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 16,777,216位（2097,152 - Word 1048,576字BY16位）的CMOS 3.3只，块擦除闪
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| HM514400A HM514400AJ-6 HM514400AJ-7 HM514400AJ-8 H |
1,048,576-word x 4-bid DRAM, 70ns
1,048,576-WORD x 4-BIT DYNAMIC RAM
1,048,576-word x 4-bid DRAM, 60ns
1,048,576-word x 4-bid DRAM, 80ns
|
HITACHI[Hitachi Semiconductor]
|
| CY7C1425AV18 CY7C1414AV18-167BZI CY7C1414AV18-167B |
36-Mbit QDR-II SRAM 2-Word Burst Architecture
36-Mb QDR-II SRAM2-Word Burst结构36-Mb QDR-II SRAM2-Word Burst结构 36 - MB的QDR - II型的SRAM2字突发结构）6 - MB的QDR - II型的SRAM2字突发结构）
|
Cypress Semiconductor Corp.
|
