PART |
Description |
Maker |
FQU5N40 FQD5N40 FQD5N40TF FQD5N40TM |
400V N-Channel QFET 400V N-Channel MOSFET 400V N-Channel MOSFET(漏源电压00V、漏电流.4A的N沟道增强型MOS场效应管) 3.4 A, 400 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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STP11NB40 STP11NB40FP 5322 |
N-Channel 400V-0.48惟-10.7A- TO-220/TO-220FP PowerMESHTM MOSFET(N娌??MOSFET) N - CHANNEL 400V - 0.48ohm - 10.7A - TO-220/TO-220FP PowerMESH MOSFET From old datasheet system N-Channel 400V-0.48Ω-10.7A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET) N沟道400V -0.48Ω- 10.7A - TO-220/TO-220FP PowerMESHTM MOSFET的(不适用沟道MOSFET的)
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
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IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA From old datasheet system 3.1A 400V 1.800 Ohm N-Channel Power MOSFETs 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs 0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
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INTERSIL[Intersil Corporation] HARRIS SEMICONDUCTOR
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IRFI710B IRFW710B IRFW710 IRFW710BTM |
400V N-Channel B-FET / Substitute of IRFW710A 400V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFW740 IRFW740B IRFI740B IRFW740BTM IRFW740BTMNL |
400V N-Channel B-FET / Substitute of IRFW740A 400V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
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IRF710 FN2310 |
2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N娌??澧?己?????OS?烘?搴??) From old datasheet system 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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HARRIS SEMICONDUCTOR Intersil Corporation
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IRFR310B IRFU310B IRFR310BTF IRFU310BTU FR310B |
400V N-Channel MOSFET 400V N-Channel B-FET / Substitute of IRFR310 & IRFR310A 400V N-Channel B-FET / Substitute of IRFU310 & IRFU310A
|
FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor] International Rectifier
|
IRF1730G IRFI730G IRFI730GPBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package HEXFET? Power MOSFET Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=3.7A) Power MOSFET(Vdss=400V/ Rds(on)=1.0ohm/ Id=3.7A)
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IRF[International Rectifier]
|
IXTL15N20 IXTL8P40 IXTL5N65 IXTL5P40 IXTL6N60 IXTM |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-204AC TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 24A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 6A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254 晶体管| MOSFET的| P通道| 200伏五(巴西)直| 10A条(丁)|254 TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5A I(D) | TO-254 晶体管| MOSFET的| N沟道|650V五(巴西)直| 5A条(丁)|54 TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-3 晶体管| MOSFET的| P通道| 150伏五(巴西)直| 7A条(丁)| TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-210AC 晶体管| MOSFET的| N沟道| 500V五(巴西)直|3A条(丁)|10AC TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220 晶体管| MOSFET的| P通道| 500V五(巴西)直| 5A条(丁)|220
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MITSUMI ELECTRIC CO., LTD. Infineon Technologies AG HIROSE ELECTRIC Co., Ltd.
|
FDP26N40 FDPF26N40 |
N-Channel MOSFET 400V, 26A, 0.16Ω N-Channel MOSFET 400V, 26A, 0.16ヘ
|
Fairchild Semiconductor
|
FQU4P40 FQD4P40 FQD4P40TM FQD4P40TF |
400V P-Channel MOSFET 400V P-Channel QFET
|
FAIRCHILD[Fairchild Semiconductor]
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