| PART |
Description |
Maker |
| M5M5V108CFP-10HI M5M5V108CFP-10XI M5M5V108CFP-70HI |
1048576-bit (131072-word by 8-bit) CMOS static RAM
From old datasheet system
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
|
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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M51008DFP M5M51008DFP-55H M5M51008DFP-70H M5M510 |
1048576位（131072 - Word-8-bit）的CMOS static RAM 1048576位（131072 - Word8位）的CMOS静态RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word8位）的CMOS静态RAM
Octal D-Type Transparent Latches With 3-State Outputs 20-SO -40 to 85
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M51008BKR-10L M5M51008BKR-10LL M5M51008BKR-55L M |
128K X 8 STANDARD SRAM, 100 ns, PDSO32
1048576-bit (131072-word by 8-bit) CMOS static SRAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静RAM
128K X 8 STANDARD SRAM, 70 ns, PDSO32
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| M5M51008BKV-15VL M5M51008BKV-15VLL M5M51008BKV-70V |
128K X 8 STANDARD SRAM, 120 ns, PDSO32
From old datasheet system
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| M5M51008CKR-70 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
Mitsubishi Electric Sem...
|
| M5M51008KR-70XI M5M51008KR-55XI M5M51008KR-70HI M5 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| HN27C101ATT |
131072-word 5 8-bit CMOS One Time Electrically Programmable ROM
|
Renesas Technology / Hitachi Semiconductor
|
| M5M5V216ART-70HI M5M5V216ART-55HI M5M5V216ATP M5M5 |
Memory>Low Power SRAM
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| HN27C101G HN27C101AG-17 |
IC EPROM UV 1MBIT 128K x 8 170NS 32CDIP
131072 word x 8 Bit CMOS UV EPROM
|
Renesas Technology / Hitachi Semiconductor
|
| CXK5T8512TM/TN-10LLX CXK5T8512TM/TN-12LLX CXK5T851 |
64K X 8 STANDARD SRAM, 120 ns, PDSO32
65536-word x 8-bit High Speed CMOS Static RAM
65536-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| M6MGD967W3 |
100,663,296-BIT (6,291,456-WORD BY 16-BIT) CMOS FLASH MEMORY &33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS Mobile RAM
|
RENESA
|
