PART |
Description |
Maker |
IDT74FCT162H272CTPA IDT74FCT162H272CTPAB IDT74FCT1 |
FAST CMOS 12-BIT SYNCHRONOUS BUS EXCHANGER FCT SERIES, 12-BIT EXCHANGER, TRUE OUTPUT, CDFP56 FAST CMOS 12-BIT SYNCHRONOUS BUS EXCHANGER FCT SERIES, 12-BIT EXCHANGER, TRUE OUTPUT, PDSO56 FAST CMOS 12-BIT SYNCHRONOUS BUS EXCHANGER 快速CMOS 12位同步总线交换 CAP 47UF 6V 10% TANT SMD-7343-31 TR-7-PL SN100% LOWESR-220 CAP 4.7UF 35V 20% TANT SMD-7343-31 TR-7-PL SN/PB5% LOWESR-700
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Integrated Device Technology, Inc. IDT[Integrated Device Technology]
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PDPD431636L |
1M-Bit CMOS Synchronous Fast Static RAM(1M CMOS 同步快速静态RAM) 100万位CMOS同步快速静态RAM100万的CMOS同步快速静态内存)
|
NEC, Corp.
|
UPD4482161GF-A65 UPD4482161GF-C75 UPD4482321GF-C75 |
8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION
|
NEC Corp.
|
UPD44323362F1-C40-FJ1 UPD44323362 |
32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 1M-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
|
NEC[NEC]
|
UPD4482321GF-A65 UPD4482321GF-A85 UPD4482321GF-C85 |
(UPD4482161/2181/2321/2361) 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION
|
NEC[NEC]
|
FM93C06E FM93C06 FM93C06V FM93C06L FM93C06LZ FM93C |
256-Bit Serial CMOS EEPROM (MICROWIRE?Synchronous Bus) The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each Microwire Serial EEPROM 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8 Microwire Serial EEPROM 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 From old datasheet system 256-Bit Serial CMOS EEPROM (MICROWIRE Synchronous Bus) 256-BIT SERIAL CMOS EEPROM (MICROWIRE⒙ SYNCHRONOUS BUS) 256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
|
Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24 x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24 4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M IC REG LDO 1A 12V SHDN TO220FP-5 null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
TC7MH163FK TC7MH161FK |
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic 东芝的CMOS数字集成电路硅单 Synchronous Presettable 4-Bit Binary Counter Asynchronous Clear Synchronous Presettable 4-Bit Binary Counter Synchronous Clear
|
Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
|
VG4616322BQ-7R VG4616322BQ-5 VG4616322BQ-5R VG4616 |
262,144x32x2-Bit CMOS Synchronous Graphic RAM 512K X 32 SYNCHRONOUS GRAPHICS RAM, 4.5 ns, PQFP100 262/144x32x2-Bit CMOS Synchronous Graphic RAM
|
Vanguard International Semiconductor, Corp. Vanguard International ...
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NM93C66 NM93C66VMT8 |
4096-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus) MicrowireSerialEEPROM 4096-Bit Serial CMOS EEPROM (MICROWIRE Synchronous Bus)
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD
|
K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36 512Kx16 bit Low Power Full CMOS Static RAM 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM
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Cypress Semiconductor, Corp. Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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