| PART |
Description |
Maker |
| IS61C256 |
WRITE CYCLE SWITCHING CHARACTERISTICS
|
Integrated Silicon Solution, Inc
|
| MAX1837ETT50-T MAX1837EUT33TG16 MAX1836EUT50 |
0.9 A SWITCHING REGULATOR, PDSO6
24V Internal Switch, 100% Duty Cycle, Step-Down Converters
0.45 A SWITCHING REGULATOR, PDSO6
|
MAXIM INTEGRATED PRODUCTS INC
|
| IR1152S |
One Cycle Control PFC IC designed to operate in continuous conduction mode (CCM), Fixed 66kHz switching frequency
|
International Rectifier
|
| SSI32R5111M-8CL SSI32R5111R-4CL SSI32R5111RM-6CL |
8-Channel Disk Read/Write Circuit 8通道磁盘写电
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
6-Channel Read/Write Circuit 6通道写电
|
Electronic Theatre Controls, Inc.
HIROSE ELECTRIC Co., Ltd.
|
| DS28E10P DS28E10RT DS28E10PT DS28E1011 CAT1021YI-3 |
1-Wire SHA-1 Authenticator Irreversible Write Protection
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
2K/4K-Bit Serial EEPROM with Partial Array Write Protection 2K/4K-Bit偏串行EEPROM阵列写保
|
Maxim Integrated Products
|
| SSI32R511-8F SSI32R516-6CH SSI32R516-6CL SSI32R516 |
4-Channel Disk/Tape Read/Write Circuit
8-Channel Disk Read/Write Circuit 8通道磁盘写电
6-Channel Read/Write Circuit 6通道写电
|
API Delevan
|
| MK4096P-6 MK4096N-6 MK4096N-11 MK4096N-16 MK4096P- |
4096x1-bit dynamic RAM, 250ns acces time, 375ns cycle time, max. power 450mW.
4096x1-bit dynamic RAM, 350ns acces time, 500ns cycle time, max. power 320mW.
4096x1-bit dynamic RAM, 300ns acces time, 425ns cycle time, max. power 385mW.
|
Mostek
|
| MAX1836 MAX1836EUT33 MAX1836EUT33-T MAX1836EUT50 M |
CHOKE COIL 100UH 600MA SMD
24V Internal Switch / 100% Duty Cycle / Step-Down Converters
From old datasheet system
DC/DC CONVERTER, 3.3V,BICMOS,TSOP,6PIN
"24V Internal Switch, 100% Duty Cycle, Step-Down Converters"
|
Maxim Integrated Products, Inc.
Maxim Integrated Products Inc
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| VM712N415SSL VM712N830CPOL VM712N830IPOL VM712N830 |
4-Channel Disk/Tape Read/Write Circuit
8-Channel Disk Read/Write Circuit 8通道磁盘写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
Nihon Inter Electronics, Corp.
|
| VM310R-4PO VM310-6PL VM310-6PO VM310R-6PO VM310R-6 |
6-Channel Read/Write Circuit
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
|
Digital Data Communications GmbH
Electronic Theatre Controls, Inc.
|
| IDT71V2577YS75BQI IDT71V2577YS75BGI IDT71V2579S85B |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K的x 36256亩18 3.3同步SRAM.5VI / O的流量通过输出脉冲计数器，单周期取
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
