| PART |
Description |
Maker |
| AT49BV8011 AT49BV8011-12CI AT49LV8011 AT49LV8011-9 |
8M bit. 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash. Bottom Boot 800万位2.7伏读取和2.7伏字节写扇区闪存。底部启
x8/x16 Flash EEPROM x8/x16闪存EEPROM
8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
|
3M Company
Atmel, Corp.
AMIC Technology, Corp.
Advanced Micro Devices, Inc.
ATMEL[ATMEL Corporation]
|
| AT49F080 AT49F080-12CC AT49F080-12CI AT49F080-12RC |
8-Megabit 1M x 8 5-volt Only Flash Memory 1M X 8 FLASH 5V PROM, 120 ns, PDSO40
8-Megabit (1M x 8) 5-volt ohly flash memory, 50mA active current, 0.3mA standbgy current
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| AM29LV002 AM29LV002B-90RECB AM29LV002B-120FCB AM29 |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only/ Boot Sector Flash Memory
Half Bridge Driver, LO Out of Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-pin DIP package
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位56亩8位）.0伏的CMOS只，引导扇区闪存
Connector 连接
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 100 ns, PDSO40
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
MB 18C 18#20 PIN RECP 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区闪存
256K X 8 FLASH 3V PROM, 90 ns, PDSO40
|
AMD
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AT45DB161B-CNC AT45DB161B-CNC-2.5 AT45DB161B-CNI A |
16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH 16M X 1 FLASH 2.7V PROM, PDSO28
16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH 16M X 1 FLASH 2.7V PROM, PBGA24
16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH
|
ATMEL Corporation
Atmel, Corp.
http://
聚兴科技股份有限公司
Atmel Corp.
|
| S29GL016A10FAIR10 S29GL016A30FAIR10 S29GL032A10FAI |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
|
SPANSION
http://
|
| S29GL016A S29GL016A100BAI010 S29GL016A100BAI012 S2 |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
|
SPANSION
|
| S29GL064N90DFI040 S29GL064N90BFI033 S29GL032N90TFI |
4M X 16 FLASH 3V PROM, 90 ns, PBGA64 9 X 9 MM, LEAD FREE, FBGA-64
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
|
Spansion, Inc.
SPANSION LLC
|
| AT49F8192 AT49F8192- AT49F8192T-90TI AT49F8192-12R |
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| AMD29F010B AM29F010B-90PI AMD29F010B-45EE AMD29F01 |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package; A IRLML2402 with Tape and Reel Packaging
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位28亩8位）的CMOS 5.0伏只，统一部门快闪记忆
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位128亩8位）的CMOS 5.0伏只，统一部门快闪记忆
|
Advanced Micro Devices, Inc.
|
| DL324 DL323 DL322 AM29DL323GB120EF AM29DL323GT120E |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 2M X 16 FLASH 3V PROM, 120 ns, PBGA48
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 2M X 16 FLASH 3V PROM, 120 ns, PDSO48
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同时作业快闪记忆
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 32兆位4个M × 8 2米x 16位）.0伏的CMOS只，同时作业快闪记忆
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 32兆位M × 8 2米x 16位）.0伏的CMOS只，同时作业快闪记忆
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc.
Spansion, Inc.
|
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