| PART |
Description |
Maker |
| Q60103-X152-D Q60103-X152-E Q60103-X152-F Q60103-X |
pnp germanium transistors pnp型锗晶体
CAP .0022UF 1600V METAL POLYPRO pnp型锗晶体
Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:37; Connector Shell Size:14; Connecting
24 V, PNP germanium transistor
20 V, PNP germanium transistor
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| AA143 |
Gold Bonded Germanium Diodes 0.04 A, GERMANIUM, SIGNAL DIODE, DO-7
Gold Bonded Germanium Diodes
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 2N1522 |
Germanium Power Transistors
|
GPD Optoelectronic Devices
|
| OC28 |
Germanium Power Transistors
|
GPD
|
| BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1 |
NPN wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package
|
NXP Semiconductors
|
| 2N1038 2N1039 2N1040 2N1041 2N2554 2N2556 2N2552 2 |
PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| 1N156 1N158 1N158A |
PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| NTE105 |
Germanium PNP Transistor Audio Power Amp
|
NTE[NTE Electronics]
|
| RQG2001URAQF RQG2001UR-TL-E |
NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| 1N3110 1N949 1N3287 1N3287WUSN 1N3125 1N3146 1N994 |
8 V, 500 mA, gold bonded germanium diode
40 V, 500 mA, gold bonded germanium diode
6 V, 200 mA, gold bonded germanium diode
GOLD BONDED DIODES
6 V, 500 mA, gold bonded germanium diode
25 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
15 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| AA113 2-OA95 2-OA90 2-OA91R JAN1N3287X 1N3287R JAN |
65 V, GERMANIUM, SIGNAL DIODE
100 V, GERMANIUM, SIGNAL DIODE
30 V, GERMANIUM, SIGNAL DIODE
6 V, GERMANIUM, SIGNAL DIODE
20 V, GERMANIUM, SIGNAL DIODE
|
MICROSEMI CORP
MICROSEMI CORP-LAWRENCE
|
