| PART |
Description |
Maker |
| FQD7N10L FQU7N10L FQU7N10LTU FQD7N10LTF FQD7N10LTM |
100V LOGIC N-Channel MOSFET
100V N-Channel Logic Level QFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQA33N10L |
100V LOGIC N-Channel MOSFET 36 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| HUF76639S3S HUF76639P3 |
50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
50A 100V 0.027 Ohm N-Channel Logic Level UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF19N10L |
100V LOGIC N-Channel MOSFET 13.6 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| FQPF7N10L FQPF7N10 |
100V LOGIC N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF33N10L |
100V LOGIC N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDP3682 FDB3682 FDP3682NL |
N-Channel PowerTrench MOSFET 100V/ 32A/ 36m
N-Channel PowerTrench MOSFET 100V, 32A, 36mз
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 32A, 0.036 ohm @ Vgs = 10V, TO-220 Package
|
Fairchild Semiconductor
|
| IRLI510ATU IRLW510A IRLW510ATM |
100V N-Channel Logic Level A-FET
Power MOSFET
|
Fairchild Semiconductor
|
| IRLI520A IRLW520ATM |
Power MOSFET
100V N-Channel Logic Level A-FET
|
Fairchild Semiconductor
|
| IRLW530A IRLWI530A IRLI530A IRLW530ATM |
100V N-Channel Logic Level A-FET
ADVANCED POWER MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
