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IRG4PH30 - INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 3.10V，@和VGE \u003d 15V的，集成电路\u003d 10A条） 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package

IRG4PH30_942663.PDF Datasheet
 
Part No. IRG4PH30 IRG4PH30K
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 3.10V，@和VGE \u003d 15V的，集成电路\u003d 10A条）
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
File Size 158.36K  /  8 Page  

Maker

International Rectifier, Corp.

JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: IRG4PH30K
Maker: IR
Pack: TO-3P
Stock: Reserved
Unit price for :
    50: $2.02
  100: $1.92
1000: $1.82

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 Full text search : INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 3.10V，@和VGE \u003d 15V的，集成电路\u003d 10A条） 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
 Product Description search : INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 3.10V，@和VGE \u003d 15V的，集成电路\u003d 10A条） 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package

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