| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| AMF-3D-001080-18-13P AMF-4F-00100100-15-10P AMF-4F |
100 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
5400 MHz - 5900 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
500 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
30000 MHz - 33000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
4400 MHz - 5100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
1500 MHz - 1800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
38000 MHz - 42000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
40000 MHz - 45000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
41000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
12000 MHz - 24000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
3000 MHz - 3500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
250 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
15000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
30 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
18000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
36000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
1000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
7900 MHz - 8400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2100 MHz - 2400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
200 MHz - 400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
50 MHz - 100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6400 MHz - 7200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
15500 MHz - 16500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
7250 MHz - 7750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
950 MHz - 1450 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
9500 MHz - 10500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
800 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
1500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
9000 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
8000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
4000 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
18000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
10 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
500 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF6G22-45 |
Power LDMOS transistor
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.
UHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| CK-L09505M521 CK-L09505D521 CK-L09623M511 CK-R2273 |
9250 MHz - 9750 MHz RF/MICROWAVE ISOLATOR
8400 MHz - 10700 MHz RF/MICROWAVE ISOLATOR
21200 MHz - 24200 MHz RF/MICROWAVE ISOLATOR
3400 MHz - 3500 MHz RF/MICROWAVE ISOLATOR
3600 MHz - 4200 MHz RF/MICROWAVE ISOLATOR
5800 MHz - 7200 MHz RF/MICROWAVE ISOLATOR
4300 MHz - 5100 MHz RF/MICROWAVE ISOLATOR
17300 MHz - 19700 MHz RF/MICROWAVE ISOLATOR
|
FDK CORP
|
| TFF11145HN BLP7G10S-140 BLP7G10S-140G BLS7G3135LS- |
LDMOS S-Band radar power transistor
Low phase noise LO generator TFF11126HN/N1<SOT616-1 (HVQFN24)|<<http://www.nxp.com/packages/SOT616-1.html<1<Always Pb-free,;
Power LDMOS transistor BLP7G10S-140G<SOT1204 (HSOP4)|<<http://www.nxp.com/packages/SOT1204.html<1<Always Pb-free,;
Power LDMOS transistor BLP7G10S-140<SOT1138 (HSOP4F)|<<http://www.nxp.com/packages/SOT1138.html<1<Always Pb-free,;
SiGe:C Low Noise High Linearity Amplifier
|
NXP Semiconductors N.V.
|
| 0809LD60P |
Compant High-Insulation Power Relay, Polarized, 10A 60瓦，28V的，1 GHz的LDMOS的场效应
60 Watt / 28V / 1 Ghz LDMOS FET
60 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| 3-28-109 3-05-109 3-10-109 3-08-109 3-04-109 3-03- |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Fixed Attenuators 18325 GHz 固定衰减18325千兆
33000 MHz - 50000 MHz RF/MICROWAVE FIXED ATTENUATOR
40000 MHz - 60000 MHz RF/MICROWAVE FIXED ATTENUATOR
18000 MHz - 26500 MHz RF/MICROWAVE FIXED ATTENUATOR
220000 MHz - 325000 MHz RF/MICROWAVE FIXED ATTENUATOR
|
TE Connectivity, Ltd.
|
