| PART |
Description |
Maker |
| IXGQ100N60Y4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C)
|
|
| C67070-A2710-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| VII125-12G4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 125A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 125A条一（c
|
IXYS, Corp.
|
| VII100-12S4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一（c
|
Aimtec
|
| SIM400D06AV3 |
“HALF-BRIDGE IGBT MODULE
“HALF-BRIDGE” IGBT MODULE
|
SemiWell Semiconductor
|
| SIM75D12SV1 |
“HALF-BRIDGE IGBT MODULE
“HALF-BRIDGE” IGBT MODULE
|
SemiWell Semiconductor
|
| DIM200WHS17-A000 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
| BSM150GB170DN2E3166 150B17E2 C67070-A2709-A67 |
From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| FB514 FB612 FB614 FB522 FB524 FB523 |
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|1.2KV V(RRM)|25A I(T) 晶闸管模块|桥|半CNTLD |消委会| 1.2KV五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|600V V(RRM)|42.5A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|1.2KV V(RRM)|42.5A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|600V V(RRM)|25A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1.2KV V(RRM)|25A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|800V V(RRM)|25A I(T)
|
Square D by Schneider Electric
|
| C67070-A2702-A67 BSM75GB170DN2 075B17N2 |
From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
