PART |
Description |
Maker |
DS1265W-100IND |
3.3V 8Mb Nonvolatile SRAM 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA36
|
Maxim Integrated Products, Inc. Dallas Semiconductor
|
IBM0418A80QLAB IBM0418A40QLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )同步CMOS静态RAM) 4Mb( 256K x 18 ) SRAM(4Mb( 256K x 18 )同步CMOS静态RAM) 4Mb的(256 × 18)的SRAMMb的(256 × 18)同步的CMOS静态RAM)的
|
IBM Microeletronics International Business Machines, Corp.
|
GS78108AB-10 GS78108AB-10I GS78108AB-12 GS78108AB- |
1M x 8 8Mb Asynchronous SRAM
|
http:// GSI[GSI Technology]
|
MT58L512L18F MT58L256L32F |
(MT58Lxxxx) 8Mb SYNCBURST SRAM
|
Micron Semiconductor
|
MT58L512L18P MT58L256L32P |
(MT58Lxxxx) 8Mb SYNCBURST SRAM
|
Micron Semiconductor
|
GS78108B-10 |
10ns 1M x 8 8Mb asynchronous SRAM
|
GSI Technology
|
GS78116AGB-8I GS78116AB-10 GS78116AB-10I GS78116AB |
512K X 16 STANDARD SRAM, 10 ns, PBGA119 512K x 16 8Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
MT58L512L18F MT58L256L32F MT58L256V32F MT58L256V36 |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
MT58L512L18F |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology, Inc.
|
N08T1630CXB |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|
N08L163WC2A |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|