| PART |
Description |
Maker |
| 33LV408RPFE-30 33LV408RPFS-30 33LV408RPFI-30 33LV4 |
4 Megabit (512K x 8-Bit) CMOS SRAM 512K X 8 STANDARD SRAM, 30 ns, DFP32
4 Megabit (512K x 8-Bit) CMOS SRAM 512K X 8 STANDARD SRAM, 30 ns, PDFP32
4 Megabit (512K x 8-Bit) CMOS SRAM 512K X 8 STANDARD SRAM, 20 ns, PDFP32
4 Megabit (512K x 8-Bit) CMOS SRAM 512K X 8 STANDARD SRAM, 25 ns, PDFP32
4 Megabit (512K x 8-Bit) CMOS SRAM 512K X 8 STANDARD SRAM, 25 ns, DFP32
4 Megabit (512K x 8-Bit) CMOS SRAM 512K X 8 STANDARD SRAM, 20 ns, DFP32
|
Maxwell Technologies, Inc
|
| BS616LV8017 BS616LV8017FIP70 BS616LV8017EC BS616LV |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Asynchronous 8M(512Kx16) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| K6T4008C1C K6T4008C1C-B K6T4008C1C-DB55 K6T4008C1C |
512Kx8 bit Low Power CMOS Static RAM
512K X 8 STANDARD SRAM, 70 ns, PDIP32
512K X 8 STANDARD SRAM, 55 ns, PDSO32
512K X 8 STANDARD SRAM, 70 ns, PDSO32
512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
http://
|
| 89C1632RPQE-25 89C1632RPQH-25 89C1632RPQK-25 89C16 |
16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CQFP68
16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
16 Megabit (512K x 32-Bit) MCM SRAM 16兆位12k × 32的位）立方米的SRAM
|
Maxwell Technologies, Inc
|
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| HY62V8400 HY62V8400LT2 HY62V8400LG HY62V8400LP HY6 |
512K X 8-bit CMOS SRAM
|
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| WPS512K32-15PJC WPS512K32-15PJI WPS512K32-17PJC WP |
512K x 8 SRAM, 15ns
512K x 8 SRAM, 17ns
512K x 8 SRAM, 20ns
512K x 8 SRAM, 25ns
|
White Electronic Designs
|
| LY62W5128 LY62W5128E LY62W5128I LY62W5128UL LY62W5 |
512K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| BS616LV8016DIP55 BS616LV8016FCP55 BS616LV8016FC70 |
Very Low Power CMOS SRAM 512K X 16 bit
|
Brilliance Semiconductor
|
| LY61L5128 LY61L5128GV LY61L5128I LY61L5128LV LY61L |
512K X 8 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| LY62L51316LL-55LLI LY62L51316LL-55LLIT |
512K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| BS62LV4006SCP55 BS62LV4006STC55 BS62LV4006HIG55 BS |
Very Low Power CMOS SRAM 512K X 8 bit
|
Brilliance Semiconducto...
http://
Brilliance Semiconductor
|
