| PART |
Description |
Maker |
| BS223 |
DMOS Transistors (P-Channel)
DMOS Transistors (P-Channel)(P通道DMOS晶体
|
GE[General Semiconductor]
GE Security, Inc.
|
| BS870 |
DMOS Transistors (N-Channel)
|
GE[General Semiconductor]
|
| BS170 |
DMOS Transistors (N-Channel)
|
General Semiconductor
|
| BS208 |
DMOS Transistors (P-Channel)(P通道DMOS晶体
|
GE Security, Inc.
General Semiconductor
|
| 2SK2365 2SK2366 2SK2366-Z 2SK2365-S 2SK2365-Z |
N-channel enhancement type DMOS
MOS Field Effect Transistors
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| FDPF10N60NZ |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Fairchild Semiconductor
|
| ZVN0120L ZVN0120 ZVN0120A ZVN0120B |
BV(dss): 200V; I(d): 0.16A; R(ds): 16 Ohm; N-channel enhancement-mode vertical DMOS FET
N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
ZETEX[Zetex Semiconductors]
|
| TD9944 TD9944TG |
Dual N-Channel Enhancement-Mode Vertical DMOS FETs 240 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
|
Supertex, Inc.
SUTEX[Supertex, Inc]
|
| IRF460 IRF460NBSP IRF460PBF |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
HEXFET?TRANSISTORS 500V, N-CHANNEL
N-Channel Enhancement MOSFET
From old datasheet system
TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE)
|
IRF[International Rectifier]
|
| TN2504 TN2504N8 TN2504ND |
N-Channel Enhancement-Mode Vertical DMOS FETs 0.89 A, 40 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA
|
Supertex Inc
SUTEX[Supertex, Inc]
Supertex, Inc.
|
| CPC3703CTR CPC3703 CPC3703C |
N-Channel Depletion-Mode Vertical DMOS FETs
0.36 A, 250 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Clare, Inc.
CLARE INC
|
| TP2640ND |
P-Channel Enhancement-Mode Vertical DMOS FETs 400 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Supertex, Inc.
|
