| PART |
Description |
Maker |
| BFY90 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| MRF586 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
ADPOW[Advanced Power Technology]
|
| MS1251 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| MS1261 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| 2N5031 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
ADPOW[Advanced Power Technology]
|
| 2N5179 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
ADPOW[Advanced Power Technology]
|
| 2N6304 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
ADPOW[Advanced Power Technology]
|
| 2N2857 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| SGR6N60UFTF |
Discrete, High Performance IGBT; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
|
FAIRCHILD SEMICONDUCTOR CORP
|
| MRF5812 MRF5812R1 MRF5812R2 MRF5812R1R2 MSC1319 |
From old datasheet system
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
MICROSEMI[Microsemi Corporation]
|
| 2N4427 MSC1301 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
From old datasheet system
|
MICROSEMI[Microsemi Corporation]
|
| MRF544 MSC1314 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
From old datasheet system
|
Microsemi Corporation
|
